PUBLICATIONS
[16] Arwa Saud Abbas, “Scientific explanation of e+ and Weyl fermion for injecting semiconductor devices.”, Frontiers in Electronics, 5:1372631. https://doi:10.3389/felec.2024.1372631.
[P15] Arwa Saud Abbas, “Describing e+ and Weyl fermion as beam/current for pump/injection semiconductor devices.” APL Energy 2, 030901 (2024) 1-10. https://doi.org/10.1063/5.0203238.
[P14] Valentin Jmerik, Alexey Semenov, Dmitriy Nechaev, Sergey Troshkov, Darya Sakhno, Prohor Alekseev, Demid Kirilenko, Ilya Eliseyev, Valery Davydov, and Arwa Saud Abbas, “Low-defect and stress-free AlN nanoprisms and microrods selectively grown on micro-patterned c-sapphire substrate by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett. 124, 232104 (2024), https://doi.org/10.1063/5.0216809
[P13] Semenov, Alexey N., Dmitii V. Nechayev, Sergei I. Troshkov, Darya S. Berezina, Abbas Arwa Saud, and Valentin N. Jmerik. “GaN micro-and nanostructures selectively grown on profiled sapphire substrates using PA-MBE without lithography.” Condensed Matter and Interphases 25, no. 4 (2023): 532-541.
[P12] Arwa Saud Abbas et al., “Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes”, Adv. Nan. Res., vol. 6, no. 1, pp. 29–43, (2023). https://doi: https://doi.org/10.21467/anr.6.1.29-43.
[P11] Arwa Saud Abbas, Ultrawide-bandgap semiconductor of carbon-based materials for meta-photonics-heterostructure, lasers, and holographic displays. AAPPS Bull. 33, 4 (2023). https://doi.org/10.1007/s43673-022-00073-0
[P10] Arwa Saud Abbas, Alyamani, A., Nakamura, S., Denbaars, S., Damage-free substrate removal technique: wet undercut etching of semipolar (20-21) laser structures by incorporation of un/relaxed sacrificial layer single quantum well, (2021) Japanese Journal of Applied Physics: JJAP-103323, https://doi.org/10.35848/1347-4065/abf36d
[P9] Arwa Saud Abbas, PhD Dissertation, Optical Modeling, MOCVD Growth, and Development of Novel Fabrication Technologies for Semi-Polar (20-21) GaN Flip-Chip Edge Emitting Lasers Structures, University of California, Santa Barbara, ProQuest, March (2020).
[P8] Arwa Saud Abbas, Alyamani, A., Nakamura, S., Denbaars, S., (2019) Enhancement of n-type GaN (20-21) semipolar surface morphology in photo-electrochemical undercut etching. Appl. Phys. Express, 12 036503. https://doi.org/10.7567/1882-0786/ab028d
[P7] Becerra, D., Kuritzky, L., Nedy, J., Arwa Saud Abbas, Pourhashemi, A., & Farrell, R. et al. (2016). Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20-2-1) III-nitride laser diodes with chemically assisted ion beam etched facets. Applied Physics Letters, 108(9), 091106. http://dx.doi.org/10.1063/1.4943143
[P6] Kuritzky, L., Becerra, D., Arwa Saud Abbas, Nedy, J., Nakamura, S., DenBaars, S., & Cohen, D. (2016). Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN. Semiconductor Science and Technology, 31(7), 075008. http://dx.doi.org/10.1088/0268-1242/31/7/075008
[P5] Arwa Saud Abbas, Alqarni, S., Shokouhi, B., Yavuz, M., & Cui, B. (2014). Water soluble and metal-containing electron beam resist poly(sodium 4-styrenesulfonate). Materials Research Express, 1(4), 045102. http://dx.doi.org/10.1088/2053-1591/1/4/045102
[P4] Arwa Saud Abbas, Yavuz, M., & Cui, B. (2014). Metal and organic nanostructure fabrication by electron beam lithography and dry liftoff Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on 10.1109/NANO.2014.6968083
[P3] Arwa Saud Abbas, Yavuz, M., & Cui, B. (2014). Polycarbonate electron beam resist using solvent developer. Microelectronic Engineering, 113, 140-142. http://dx.doi.org/10.1016/j.mee.2013.08.
[P2] Con, C., Arwa Saud Abbas, Yavuz, M., & Cui, B. (2013). Dry thermal development of negative electron beam resist polystyrene. Advances In Nano Research, 1(2), 105-109. http://dx.doi.org/10.12989/anr.2013.1.2.105.
[P1] Arwa Saud Abbas, MASc thesis, Nanofabrication Using Electron Beam Lithography: Novel Resist and Applications, University of Waterloo, ProQuest, August (2013).
CITATIONS:
Google Scholar citations: 69, h–index: 6
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PATENT:
[PA1] Arwa Saud Abbas, Jared Kearns, and Steven P. DenBaars. “Enhancement of semipolar n–type GaN surface morphology in Photo–Electrochemical Undercut Etching,” Patent UC 2019–177–1; G&C 30794.0701USP1. Filed on November 7, (2018)
[PA2] Arwa Saud Abbas, THE FIRST ATTEMPT DESCRIPTING OF E+ AND WEYL FERMION AS BEAM/CURRENT FOR PUMP/INJECTION SEMICONDUCTOR DEVICES, Patent PCT/SA2024/050002. Filed on Feb (2024), WO2025122033 (A1).
[PA3] Arwa Saud Abbas, et al., (2025). Method for preparing thin carbon layer by plasma enhanced chemical vapor deposition. SA123447276 (B1). King Abdulaziz City for Science & Technology.
[PA4] Arwa Saud Abbas, A. S. (2025). Diode laser device based on carbon material. SA123447285 (B1). King Abdulaziz City for Science & Technology.